| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, having an MOS transistor which enables breakdown by simple writing, without damaging other elements regarding the manufacturing method of a semiconductor device, which realizes desired circuit operations by writing prescribed data in a completed product. SOLUTION: The concentration of second conductivity impurities in a channel region 114 side in at least a part of a P-N junction surface between a drain diffusion layer of a second MOS transistor 110 and a channel region 114 is made higher than the concentration of second conductivity impurities, in a corresponding part of a first MOS transistor, by introducing the second conductivity impurities to a semiconductor region, wherein at least a part of the P-N junction surface is formed.
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