| 摘要 |
PROBLEM TO BE SOLVED: To provide an post-cleaning method for a contact-hole etching which uses dry cleaning instead of a wet cleaning. SOLUTION: A wafer has a tungsten metal layer, an oxide layer is formed on the surface of the tungsten metal layer, a photoresist layer is formed on the surface of the oxide layer, and a contact hole for so passing it through the photoresist and oxide layers, so as to expose to the outside a prescribed area of the surface of the tungsten metal layer. In a cleaning method of the wafer, there are performed a photoresist removing step for removing first the photoresist layer, a dry-cleaning applying step for removing thereafter the polymer residuals of the preceding step and for forming a water-soluble component, and water-washing step for so dipping finally the wafer in a pure water as to dissolve the water-soluble compound. As a result, the residuals present in the contact hole are completely removed therefrom.
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