| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation method at a low cost, with which the degradation of the base surface of a resist coating film is prevented. SOLUTION: In this ion implantation method, a protective film is formed on a part other than a region to be doped on a substrate to be processed, the substrate is irradiated with ionized dopant atoms and the dopant atoms are doped to the surface layer part of the substrate without the protective film. The protective film is turned into a two-layer structure of a heat resistant film and a photoresist film, the heat resistant film 3 is formed between the substrate 2 and the photoresist film 4, and the heat resistant film is removed from the substrate together with the photoresist film, after ion implantation.
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