发明名称 SEMICONDUCTOR LASER CHIP
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser chip on which displacement of a laser beam in a polarizing direction is corrected relative to a direction in parallel with an active layer of the laser chip formed on an off substrate. SOLUTION: The semiconductor laser chip comprises an off substrate of a semiconductor crystal having a major surface tilted by a prescribed off angle from a low miller index plane, and a semiconductor laminated structure formed on the off substrate. The semiconductor laminated structure comprises the active layer having a light-emitting effect. On the laser chip, a laser oscillation light has a polarization direction changing depending on the position of a light- emitting point set in the active layer. The light-emitting point is set on a position which is displaced on purpose from the center of the width of the chip such that the polarization direction of the oscillation light is nearly in parallel with the active layer.
申请公布号 JP2002246696(A) 申请公布日期 2002.08.30
申请号 JP20010043122 申请日期 2001.02.20
申请人 SHARP CORP 发明人 OE HITOSHI
分类号 H01S5/343;H01S5/223;(IPC1-7):H01S5/343 主分类号 H01S5/343
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