| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a flash memory device having cell current measuring scheme utilizing a write-in driver. SOLUTION: This flash memory device comprises a column selecting circuit, a voltage switch circuit, and a plurality of write-in drivers. The column selecting circuit selects one out of bit lines of each group, the voltage switch circuit selects one out of program voltage form a high voltage pump circuit and external voltage from an external voltage pad. A plurality of write-in drivers are connected respectively to an input/output pad through a corresponding data input buffer. Each write-in driver transmits voltage selected by the voltage switch circuit to a bit line of which a group is selected in accordance with a data bit signal applied to a corresponding input/output pad during a test operation mode for measuring a cell current, and cuts off it. By this circuit constitution, a cell current of a memory cell can be measured by using a write-in driver without using another pass gate.</p> |
