发明名称 |
PHOTOMASK BLANK, PHOTOMASK AND METHOD FOR PRODUCING THESE |
摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a photomask blank capable of easily controlling etching rate and giving a perpendicular section shape, to obtain a photomask blank and a photomask uniform in film quality and having high quality and to make the photomask adaptable to further miniaturization and integration of a semiconductor integrated circuit. SOLUTION: In the photomask blank having at least one chromium-base light shielding film and at least one chromium-base antireflection film on a light transmissive substrate, each of the light shielding film and the antireflective film is formed from a chromium-base film containing oxygen, nitrogen and carbon and the carbon content is stepwise or continuously lowered from the surface side toward the light transmissive substrate.</p> |
申请公布号 |
JP2002244274(A) |
申请公布日期 |
2002.08.30 |
申请号 |
JP20010035783 |
申请日期 |
2001.02.13 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
SHINAGAWA TSUTOMU;MARUYAMA TAMOTSU;KANEKO HIDEO;KOJIMA MIKIO;INAZUKI SADAOMI;OKAZAKI SATOSHI |
分类号 |
C23C14/06;G03F1/46;G03F1/50;G03F1/54;G03F7/20;H01L21/027;(IPC1-7):G03F1/08;G03F1/14 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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