| 摘要 |
PROBLEM TO BE SOLVED: To reduce the influence of partial fractures occurring in a p+-type collector region and an n-type FS region on the on-state voltage characteristic or withstand voltage characteristic of a semiconductor device. SOLUTION: The semiconductor device is constituted in such a way that the n-type FS region which works to suppress the extension of a depletion layer is formed in an n--type semiconductor substrate 100 from the second main surface of the substrate 100 to a prescribed depth. An n-type region 8 is formed at an impurity concentration which is lower than that in the FS region 9 between the region 9 and the second main surface of the substrate 100. Then, after the p+-type collector region 7 is formed separately from the FS region 9 as the surface layer of the n-type region 8, an emitter electrode 10 is formed on an n+-type emitter region 3 and a p-type base region 2, and a collector electrode 11 is formed on the p+-type region 7. Since the low- concentration n-type region 8 is formed between the collector region 7 and FS region 9 so that the region 9 may not come into contact with the region 7 in this way, the influences of partial fractures occurring in the regions 7 and 9 on the on-state voltage characteristic or withstand voltage characteristic of the semiconductor device can be reduced even when the partial fractures occur in the regions 7 and 9.
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