| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein high precision can be simply and effectively realized when a viahole is formed for connecting a lower wiring layer connected with a lower electrode layer of a capacitance element of an MIMC structure with an upper wiring layer. SOLUTION: A TiN layer 18, a Ta2O5 layer 20 and a TiN layer 22 which are turned into a lower electrode, a dielectrics layer and an upper electrode of the capacitance element later, respectively, are deposited on a first lower wiring layer 12a via an SiO2 interlayer insulating film 14, and a TiN/Ta2O5/TiN laminated layer 24 is formed. After that, photoresist is spread on the whole surface of base substance by using a photolithography technique. Irradiation of an exposure light whose wavelength is 193 nm (ArF) is performed, and a resist pattern 28 wherein an aperture 26a for a viahole whose diameter is 0.2-2.0μm is formed is formed above the first lower wiring layer 12a. At this time, the TiN/Ta2O5/TiN laminated layer 24 is made to act as a reflection protecting film whose reflectance for the exposure light is less than 10%.
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