| 摘要 |
PROBLEM TO BE SOLVED: To reduce leak current while ensuring a high current capacity in a semiconductor element where Schottky barrier and the rectifying part of a PN junction are arranged contiguously to each other. SOLUTION: A plurality of insular P+ type silicon regions 15 are formed in the surface region of an N type silicon region 12. An anode electrode 13 is provided above the P+ type silicon region 15 through an insulation film 16 having an opening 16a. Outermost circumferential P+ type silicon region 15a in the vicinity of the opening 16a is arranged not to touch the anode electrode 13. Furthermore, the P+ type silicon region 15a is arranged to form a substantially integrated depletion layer upon application of a reverse voltage. |
