发明名称 |
INTEGRATED CIRCUIT MEMORY DEVICE, SEMICONDUCTOR MEMORY, AND ITS OPERATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a colume redundant scheme in which repair efficiency and versatility are largely improved and an operation method. SOLUTION: This device is provided with a plurality of input output blocks divided into first and second blocks comprising many memory cells, column selecting lines for normal operation, and spare column selecting lines for repair, only a defective memory cell out of a plurality of memory cells connected to at least one defective column selecting line of the prescribed input output block is replaced by a spare memory cell connected to the prescribed spare column selecting line with a bit unit. The defective column selecting line and the prescribed spare column selecting line are activated simultaneously. As a defective memory cell is replaced by a spare memory cell with a bit unit, repair efficiency and versatility can be improved largely.
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申请公布号 |
JP2002245793(A) |
申请公布日期 |
2002.08.30 |
申请号 |
JP20020034519 |
申请日期 |
2002.02.12 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE JAE-GOO |
分类号 |
G11C29/04;G11C5/00;G11C7/00;G11C8/00;G11C29/00;H01L31/109;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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