发明名称 INTEGRATED CIRCUIT MEMORY DEVICE, SEMICONDUCTOR MEMORY, AND ITS OPERATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory having a colume redundant scheme in which repair efficiency and versatility are largely improved and an operation method. SOLUTION: This device is provided with a plurality of input output blocks divided into first and second blocks comprising many memory cells, column selecting lines for normal operation, and spare column selecting lines for repair, only a defective memory cell out of a plurality of memory cells connected to at least one defective column selecting line of the prescribed input output block is replaced by a spare memory cell connected to the prescribed spare column selecting line with a bit unit. The defective column selecting line and the prescribed spare column selecting line are activated simultaneously. As a defective memory cell is replaced by a spare memory cell with a bit unit, repair efficiency and versatility can be improved largely.
申请公布号 JP2002245793(A) 申请公布日期 2002.08.30
申请号 JP20020034519 申请日期 2002.02.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE JAE-GOO
分类号 G11C29/04;G11C5/00;G11C7/00;G11C8/00;G11C29/00;H01L31/109;(IPC1-7):G11C29/00 主分类号 G11C29/04
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