| 摘要 |
PROBLEM TO BE SOLVED: To improve adhesion of a pad with an external connection terminal. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming an etching stopper layer 3 on a pad-forming region on a semiconductor substrate 1, forming a first interlayer insulating film 5 having an opening 5a on the pad-forming region, forming a lower layer pad 7 having a recess 7a caused by the opening 5a, and forming a second interlayer insulating film 9 having an opening 9a on the pad forming region. The method further comprises the steps of depositing a metal film, forming a recess 11a of a smaller width size W5 smaller than a bonding width W7 with a gold ball 15, and formed being caused by the opening 9a and a recess 11b of a width size W4 and formed being caused by the recess 7a in the bottom of the recess 11a, patterning the metal film, and forming an uppermost layer pad 11. Thus, connecting areas of the pad 11 to the ball 15 are increased by the recesses 11a, 11b, as compared with that of the flat surface and its adhesion is improved.
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