NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve light-emitting life and light-emitting intensity of a nitride semiconductor light-emitting device and to prevent the occurrence of a crack. SOLUTION: The nitride semiconductor light-emitting device comprises a processing substrate 101 which includes concave parts and convex parts formed on a surface of a nitride semiconductor layer grown on a substrate surface of a nitride semiconductor or on a substrate other than the nitride semiconductor, a nitride semiconductor base layer 102 grown on the uneven surface of the processing substrate, and a light-emitting device structure which includes a light-emitting layer 106 having a quantum well layer or the quantum well layer and a barrier layer between n-type layers 103 to 105 and p-type layers 107 to 110 on the base layer of the nitride semiconductor. Even after the base layer and the light-emitting device structure are grown, depressions not being flattened remain at least on the concave parts or the convex parts of the processing substrate.