| 摘要 |
PROBLEM TO BE SOLVED: To provide a lithographic photoresist composition usable as a chemically amplifier photoresist. SOLUTION: The composition is substantially transparent to deep UV, that is, radiation of <250 nm wavelength, e.g. radiation of 157 nm, 193 nm and 248 nm and has high sensitivity and resolution. The composition contains a fIuorinated vinyl polymer, particularly a fluorinated methacrylate, fluorinated methacrylonitrile or fluorinated methacrylic acid and a photo-acid generating agent. The polymer may be a homo- or copolymer. A method for forming a resist image on a substrate using the composition, that is, a method in the production of an integrated circuit or the like is also provided. |
