发明名称 |
HEAT TREATMENT DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a heat treatment device, with which the operating characteristics and reliability of a semiconductor device are improved and manufacturing cost is reduced. SOLUTION: This heat treatment device is provided with a reaction pipe, a pressurizing means for turning the inside of the reaction pipe into high pressure and a light source for heating the body to be treated installed inside the reaction pipe. In the manufacturing method of the semiconductor device using such a constitution, the inside of the reaction pipe is held at a high pressure and the body to be treated placed inside the reaction pipe is heated by light emitted from the light source provided on the outer side of the reaction pipe.</p> |
申请公布号 |
JP2002246327(A) |
申请公布日期 |
2002.08.30 |
申请号 |
JP20010044569 |
申请日期 |
2001.02.21 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
G02F1/1368;H01L21/20;H01L21/26;H01L21/265;H01L21/28;H01L21/322;H01L21/336;H01L29/786;(IPC1-7):H01L21/26;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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