| 发明名称 |
MOLYBDENUM-TUNGSTEN ALLOY THIN-FILM WIRING AND ITS MANUFACTURING METHOD |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a liquid crystal display device and an EL display device, using a TFT array of high image quality and high reliability. SOLUTION: The concentration of W in a MoW film of a gate electrode is controlled in the direction of film thickness for significantly improving BT resistance, and as a result, a TFT array of high reliability is realized.</p> |
| 申请公布号 |
JP2002246389(A) |
申请公布日期 |
2002.08.30 |
| 申请号 |
JP20010038047 |
申请日期 |
2001.02.15 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KAWAKITA TETSUO |
| 分类号 |
G02F1/1368;G09F9/30;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;H01L29/786;(IPC1-7):H01L21/320;G02F1/136 |
主分类号 |
G02F1/1368 |
| 代理机构 |
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