| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can optimize the characteristics of a bipolar transistor and a field-effect transistor, without increasing the production cost, due to increase in the number of masks and complicated manufacturing processes, and to provide a manufacturing method thereof. SOLUTION: A vertical PNP bipolar transistor 54 constituting a BiCMOS has a P-type collector region 26 and a ring-like P-type collector unloading region 24b in the circumference thereof. The impurity concentration of the P-type collector region 26 is about 1×1016 cm-3 in region near an interface a joining to an N-type base region 28, and about 1×1018 cm-3 at a depth of about 1μm from the surface. Meanwhile, the impurity concentration of a P-type collector output region 24b is an order of 1.0×1017 cm-3, which is almost uniform in the depth direction from the surface. Therefore, a collector/emitter breakdown voltage VCEO and a collector/base breakdown voltage VCBO and can be secured, to reduce collector parasitic resistance.
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