| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method, a heat treatment device and the manufacturing method of a semiconductor device, with which temperature irregularities by a position on a semiconductor substrate are eliminated, by using a flash annealing device for abruptly raising the temperature of only severalμm of the surface layer of the semiconductor substrate, without generating illuminance irregularities by the presence of a pattern, in a process of forming an impurity diffusion region in a MOS transistor. SOLUTION: In this method for realizing high-temperature heat treatment of and short time equal to or shorter than 1 second to be used for forming an extremely shallow impurity diffusion region necessary for a fine MOSFET element, whose gate length is <=100 nm, by limiting the direction of a light directed from a flash lamp to a substrate 112 to be annealed, the light whose incident angle is limited to <=60 degrees is made incident. By removing the components of the light made incident at a large angle, among the light emitted from the flash lamp to the substrate to be annealed, such as the semiconductor substrate, uniform heat treatment is enabled.
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