发明名称 SOLID-STATE IMAGE PICKUP ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure of an in-layer micro lens which improves insufficient sensitivity of a CMOS photosensor. SOLUTION: After a light shielding film is formed, a resist patterning is performed to form an opening part. The light shielding film is patterned by dry-etching, and an interlayer insulating film just below it is dry-etched up to just above a photoelectric conversion element to form a non-through hole. Then, the resist is removed, and the hole is filled with a material having a refractive index higher than the interlayer insulating film and flattened. A color filter layer is formed over it, thus a color filter layer is provided.
申请公布号 JP2002246579(A) 申请公布日期 2002.08.30
申请号 JP20010038888 申请日期 2001.02.15
申请人 SEIKO EPSON CORP 发明人 YOTSUYA SHINICHI
分类号 H01L21/02;H01L21/20;H01L27/14;H01L27/146;H01L31/0232;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L27/146;H01L31/023 主分类号 H01L21/02
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