| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing semiconductor devices wherein its sufficient characteristics can be secured for selectively etching an etched film, the upper-layer film thereof, and the lower-layer film thereof which are present on its semiconductor substrate and are object of dry etchings. SOLUTION: The apparatus for manufacturing semiconductor devices has a processing chamber 1 for performing the processing of a semiconductor substrate 6, an exhaust line 8 for so evacuating the processing chamber as to make it vacuum state; a gas line 7 for introducing reaction gases into the processing chamber; a mechanism 5 for generating a plasma in the processing chamber; a cathode electrode 3 provided inside the processing chamber and for mounting thereon the semiconductor substrate, an infrared-ray emitting mechanism 9 provided outside the processing chamber and for emitting infrared rays, and an infrared-ray introducing window 10 provided for introducing infrared rays into the processing chamber and having a relative positional relation to the infrared-ray emitting mechanism such that the infrared rays reach the semiconductor substrate.
|
