| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a memory of small storage capacity is formed at high yield even if, related to a system LSI on which a memory comprising a trenched capacitor is mounted, an etching condition is standardized for forming a deep trench among generations. SOLUTION: The semiconductor device comprises a memory part where, provided in an element formation region within a chip region of a wafer, a cell is formed using a trenched capacitor, a bonding pad 304 provided around the element formation region, and a dummy trench 303 formed, at least, either above a dicing line 305 of the wafer or below the bonding pad 304. |
