| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has an STI structure, enabling minimization of leakage current flowing between adjacent P-FET's, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a semiconductor substrate a cell region for the formation of a memory element, a core region for formation of a P-FET and other elements, and many trenches for separating into peripheral regions and also isolating the elements to be formed in the respective regions, a first sidewall oxide film formed on inner side surfaces of the trenches, a second sidewall oxide film formed on the surface of the first sidewall oxide film of those of the trenches formed on the both regions, a first buffering liner formed on the surface of the first sidewall oxide film of the trenches formed in the cell region and on the surface of the second sidewall oxide film of the trenches formed in the both regions, a second buffering liner formed on the surface, of the first buffering liner of the trenches formed in the cell region, and insulators buried in the interiors of the trenches. |
