| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a ferroelectric nonvolatile memory transistor which requires no gate stack etching. SOLUTION: A method for manufacturing the nonvolatile ferroelectric memory transistor includes a process (a) for preparing a silicon substrate which further comprises a process where an active region is formed on the silicon substrate, a process (b) where ion is implanted to form a source region and drain region in an active region, a process (c) where a lower part electrode is formed, a process (d) where a ferroelectric film is deposited in the active region, a process (e) where an upper part electrode is deposited, a process (f) where an insulating oxide film is deposited in the active region, and a process (g) where a structure acquired by the processes (a)-(f) to form a source electrode, gate electrode, and drain electrode is metalized. |
