发明名称 INTEGRATED CIRCUIT MEMORY DEVICE, SEMICONDUCTOR MEMORY, AND ITS OPERATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory in which repair efficiency and versatility are improved, constitution is unity, and which has column redundant skeem of which data access speed is fast. SOLUTION: This device is provided with a plurality of input/output blocks which is divided into first and second blocks comprising a plurality of memory cells, column selecting lines for normal operation, spare column selecting lines for repair, and which comprises first local input output lines/first global input output lines taking charge of the first block and second local input output lines/second global input output lines taking charging of the second blocks. A defective column selecting line in the prescribed input output block is replaced by not only a spare column selecting line in the self-input-output block but a spare column selecting line in adjacent input output block.
申请公布号 JP2002245792(A) 申请公布日期 2002.08.30
申请号 JP20020034518 申请日期 2002.02.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE JAE-GOO
分类号 G11C29/04;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/04
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