| 摘要 |
PROBLEM TO BE SOLVED: To simply thin a semiconductor substrate in a mirror state. SOLUTION: When a thin film, that cannot be easily machined by the plasma CVM method, for example, Au film, is formed on the main or back surface of the semiconductor substrate 2, the thin film is mechanically polished by a grinding wheel 1, and is machined by the plasma CVM method, using an etching gas 4 in a radical state and an inert gas 5, after Si for composing the semiconductor substrate 2 is exposed. When the semiconductor substrate 2 is to be machined from a main-surface side, the machining by the plasma CVM method and the mechanical polishing using the grinding wheel 1 are combined, an interlayer insulating film and wiring that have different etching rates are machined uniformly.
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