| 摘要 |
PROBLEM TO BE SOLVED: To prevent short-circuiting errors and improper breakdown voltages in the connection holes of a semiconductor device and defective buried metal in the connection holes. SOLUTION: A silicon carbide and nitride film is formed on a conductor or a wiring layer of a damascene structure formed on a silicon substrate (S1). The silicon carbide and nitride film is used as a sidewall or an interlayer insulating film (S2). A silicon oxide film is formed on the silicon carbide and on nitride film (S3). The silicon oxide film in the upper layer is etched, by using the silicon carbide and nitride film of the lower layer as an etching stop layer (S4), and connection holes are formed (S5). |
