| 摘要 |
PROBLEM TO BE SOLVED: To restrain generation of isolation defect caused by ion implantation during information writing of a mask ROM. SOLUTION: The semiconductor device has a plurality of isolation films 4, formed on a semiconductor substrate 1 and extend in one direction, a gate electrode 8, which extends in a direction perpendicular to the one direction via a gate insulation film 5 on the substrate, a source/drain region formed to be adjacent to the gate electrode 8 and an Al wiring 15, which is formed above the isolation film 8, via a layer insulation film 14 and extends in the one direction. In the device, information is written by impurity ion implantation on a surface of the semiconductor substrate. A punch-through prevention film 9 of impurity ion for information write is formed on the isolation film 4. |
