POLYCRYSTALLINE SEMICONDUCTOR THIN FILM AND FORMATION METHOD THEREFOR, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, DEVICE USED FOR EXECUTION OF THE METHODS AND ELECTRO-OPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method, by which the polycrystalline semiconductor thin film of polycrystalline silicon or the like of a high crystallization rate and high quality is easily formed in a large area at a low cost, and to provide a device for executing the method. SOLUTION: In this formation method of the polycrystalline semiconductor thin film or the manufacturing method of a semiconductor device and the device for executing them, at forming of the polycrystalline semiconductor thin film 7, such as the polycrystalline silicon film of high crystallization rate and a large particle diameter on a base body 1 or at manufacturing of the semiconductor device provided with the polycrystalline semiconductor thin film 7 on the base body 1, the polycrystalline semiconductor thin film 7 is obtained by the vapor phase epitaxial process of forming an amorphous crystallite carbon thin film 100A on the base body 1, using a catalytic CVD method or the like, bringing hydrogen or a hydrogen-containing gas into contact with a heated catalytic body 46, making a hydrogen-based active species which is generated by that action on the carbon thin film 100A, etching the amorphous components (by a catalytic AHA processing), forming the carbon superfine particle layer 100B of a diamond structure and growing the polycrystalline semiconductor thin film with it as a seed, using the catalytic CVD method or the like (further repeating the catalytic AHA processing and catalytic CVD, etc.).