METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To decrease the number of processing times at high temperature (600 deg.C or higher) to realize further low-temperature processing (600 deg.C or lower), realizing simplified process to improve throughput. SOLUTION: A barrier layer 105, a second semiconductor film 106, and a third semiconductor film 107, including impurity element (phosphorus) for providing a conductivity type, are formed on a first semiconductor film 104 which has a crystal structure, and after processing gettering for moving metal element included in the first semiconductor film 104 to the third semiconductor film 107 by heat treatment through the barrier layer 105 and the second semiconductor film 106, the second semiconductor film 106 and the third semiconductor film 107 are removed with the barrier layer 105 as the etching stopper.