发明名称 |
Interconnect structure with precise conductor resistance and method to form same |
摘要 |
An interconnect structure including a patterned multilayer of spun-on dielectrics as well as methods for manufacturing the same are provided. The interconnect structure includes a patterned multilayer of spun-on dielectrics formed on a surface of a substrate. The patterned multilayer of spun-on dielectrics is composed of a bottom low-k dielectric, a buried etch stop layer, and a top low-k dielectric, wherein the bottom and top low-k dielectrics have a first composition, the said buried etch stop layer has a second composition which is different from the first composition and the buried etch stop layer is covalently bonded to said top and bottom low-k dielectrics. The interconnect structure further includes a polish stop layer formed on the patterned multilayer of spun-on dielectrics; and metal conductive regions formed within the patterned multilayer of spun-on dielectrics. Covalent bonding is achieved by employing an organosilane having functional groups that are capable of bonding with the top and bottom dielectric layers. |
申请公布号 |
US2002117737(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20010795430 |
申请日期 |
2001.02.28 |
申请人 |
INTERNATIONAL BUSINESS CORPORATION |
发明人 |
GATES STEPHEN MCCONNELL;HEDRICK JEFFREY CURTIS;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH;TYBERG CRISTY SENSENICH |
分类号 |
H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/00;H01L23/58;H01L21/461;H01L21/302;H01L29/40;H01L23/48 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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