发明名称 |
Film thickness control using spectral interferometry |
摘要 |
A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.
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申请公布号 |
US2002119660(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20020131726 |
申请日期 |
2002.04.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SARFATY MOSHE;BALASUBRAMHANYA LALITHA S.;DAVIDOW JED E.;LYMBEROPOULOS DIMITRIS P. |
分类号 |
C23C16/44;H01L21/205;H01L21/302;H01L21/3065;H01L21/66;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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