| 摘要 |
A plurality of semiconductor elements are formed at a predetermined interval on a surface of a GaAs substrate, and the semiconductor substrate is worked to a predetermined thickness. On the other hand, an aluminum nitride plate having a flat upper surface and a lower surface, where a plurality of grooves are formed on at an interval which is substantially the same as the interval between the semiconductor elements, is prepared. Next, the semiconductor substrate, a bonding resin, and the aluminum nitride plate are stacked so as to align positions of grooves with positions between the semiconductor elements. Then, the lower surface of the semiconductor substrate is adhered to the upper surface of the plate member using a bonding resin. The thus adhered body of the GaAs substrate and the aluminum nitride plate is broken along the grooves into a plurality of pellets, thereby manufacturing semiconductor devices.
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