发明名称 |
Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window |
摘要 |
A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.
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申请公布号 |
US2002119626(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20010033949 |
申请日期 |
2001.12.28 |
申请人 |
WAWER PETER;SPRINGMANN OLIVER;WOLF KONRAD;HEITZSCH OLAF;HUCKELS KAI;RENNEKAMP REINHOLD;ROHRICH MAYK;VON KAMIENSKI ELARD STEIN;KUTTER CHRISTOPH;LUDWIG CHRISTOPH |
发明人 |
WAWER PETER;SPRINGMANN OLIVER;WOLF KONRAD;HEITZSCH OLAF;HUCKELS KAI;RENNEKAMP REINHOLD;ROHRICH MAYK;VON KAMIENSKI ELARD STEIN;KUTTER CHRISTOPH;LUDWIG CHRISTOPH |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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