HEMT AND COMMUNICATION SYSTEM USING THE SAME

摘要

A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple -doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple -doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple -doped InAlAs layer (204) as a carrier supplying layer is reduced.