发明名称 |
Serial storage device |
摘要 |
Memory cells of a storage device are addressed in n-bit word(s). Each of the n-bit word memory cells are partitioned into k (k>=2) groups of n/k bits. The memory cells are sequentially selected in n/k bits. Data of the selected n/k bit memory cells are read by n/k sense amplifiers and serially output from the storage device as readout data. The storage device requires much less chip area for n/k sense amplifiers and reduced peak currents in a read operation.
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申请公布号 |
US2002118567(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20020082045 |
申请日期 |
2002.02.20 |
申请人 |
ROHM CO., LTD. |
发明人 |
TAKAGI HIROKI;TADA YOSHIHIRO;KATSUHARA NORIAKI |
分类号 |
G11C16/06;G11C7/10;G11C16/02;G11C16/10;G11C16/26;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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