AN IMPROVED HIGH QUALITY FACTOR CAPACITOR

摘要

An improved high quality factor capacitive device is implemented on a single, monolithic integrated circuit. The new layout techniques improve the quality factor (Q) of the capacitor by reducing intrinsic resistance of the capacitor by means of reducing the distance between the metal contacts of the top and bottom conductive plates. The layout techniques require laying out the top conductive plate of the capacitor in strips such that metal contacts from the bottom conductive plate pass in between the strips and through the dielectric layer. Alternatively, the apertures may be etched into the top conductive plate so that metal contacts pass through the apertures and connect to the bottom conductive plate.