发明名称 |
Capacitor having a blended interface and a method of manufacture thereof |
摘要 |
The present invention provides a method of manufacturing a capacitor on a semiconductor wafer. The method comprises placing a metal nitride film, such as a tantalum nitride film, on a substrate of a semiconductor wafer. A first electrode and a dielectric layer are created from the metal nitride film by subjecting the metal nitride film to a plasma oxidation process, which forms a blended interface between the first electrode and the dielectric layer. To complete the capacitor, a second electrode is formed over the dielectric. Interconnections with other semiconductor devices may also be formed on the wafer to create an operative integrated circuit.
|
申请公布号 |
US2002119622(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20010794380 |
申请日期 |
2001.02.27 |
申请人 |
STEIGERWALD MICHAEL L.;WONG YIU-HUEN;ZAHURAK SUSAN M. |
发明人 |
STEIGERWALD MICHAEL L.;WONG YIU-HUEN;ZAHURAK SUSAN M. |
分类号 |
H01L21/02;H01L21/316;H01L21/334;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|