| 发明名称 |
HIGH PERFORMANCE DOUBLE-GATE LATCH |
| 摘要 |
A differential circuit to be used as a latch-up for asymmetric-double-gate complementary metal oxide semiconductor (DGCMOS) devices is provided. Specifically, the differential circuit comprises an asymmetric-DGCMOS device having the weak gates tied to input circuitry and strong gates that are used in cross-coupling. |
| 申请公布号 |
WO02067425(A2) |
申请公布日期 |
2002.08.29 |
| 申请号 |
WO2002GB00516 |
申请日期 |
2002.02.07 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED |
发明人 |
BERNSTEIN, KERRY;NOWAK, EDWARD, JOSEPH |
| 分类号 |
H01L27/092;H01L27/12;H03K3/356 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
