发明名称 |
HIGH-RESOLUTION PHOTORESIST STRUCTURING OF MULTI-LAYER STRUCTURES DEPOSITED ONTO SUBSTRATES |
摘要 |
For fabricating a multi-layer structure of m 2 layers deposited on a substrate, a radiation irradiated by structure elements themselves is used for the lithographic exposure of a covering layer thus to achieve spatial self-alignment between the different layers. In a first step, a first layer is deposited onto the substrate. In a next step, the first layer is structured into structure elements. In a further step, a second layer of a material, which is sensitive to a physical and/or chemical interaction appropriate for an image transfer from the structure elements into the second layer, is deposited onto the substrate. The second layer is exposed with a pre-mentioned interaction originated or modulated by the structure elements. Finally, the exposed or non-exposed material of the second layer is removed from the substrate thus revealing the second layer structured in accordance with said image transfer. |
申请公布号 |
WO02067054(A2) |
申请公布日期 |
2002.08.29 |
申请号 |
WO2002EP01140 |
申请日期 |
2002.02.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM DEUTSCHLAND GMBH;DAEUBLER, THOMAS;DIETZEL, ANDREAS;VOGES, FRANK |
发明人 |
DAEUBLER, THOMAS;DIETZEL, ANDREAS;VOGES, FRANK |
分类号 |
G02B5/20;G03F7/00;G03F7/20;H01L51/50;H05B33/10;H05B33/14 |
主分类号 |
G02B5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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