发明名称 |
Rissunterbrecher auf Chips mit integrierter Schaltung |
摘要 |
<p>A simplified crack stop formation compatible with shallow fuse etch processes which are utilized for modern low-cost redundancy designs using upper level metal fuses. A modified last level metallization (LLM) etch according to the invention allows a high-productivity single step bondpad/fuse/crack stop etch. The stack of metal films formed at the edge of the dicing channel is readily removed with a modified LLM etch prior to dicing causing the insulator films covering the dicing channel to be physically separated from the insulators coating the electrically active chip areas. The separation prevents cracks that could propagate through the insulators of the dicing channel in to the active chip. <IMAGE></p> |
申请公布号 |
DE69714134(D1) |
申请公布日期 |
2002.08.29 |
申请号 |
DE1997614134 |
申请日期 |
1997.05.02 |
申请人 |
SIEMENS AG;INTERNATIONAL BUSINESS MACHINES CORP., ARMONK |
发明人 |
MITWALSKY, ALEXANDER;RYAN, GARDNER |
分类号 |
H01L21/301;H01L23/485;H01L23/525;(IPC1-7):H01L23/00;H01L23/62;H01L21/320 |
主分类号 |
H01L21/301 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|