发明名称 SEMICONDUCTOR DEVICE AND ITS COOLING SURFACE FORMING METHOD
摘要 Countless columnar or planar protrusions are made on the surface of a semiconductor device and an electrically insulating thin film of SiO2, or the like, is formed on the entire surface including these protrusions by sputtering, ion plating or CVD, thus improving heat transfer characteristics of the surface.
申请公布号 WO02067323(A1) 申请公布日期 2002.08.29
申请号 WO2002JP01607 申请日期 2002.02.22
申请人 JAPAN SCIENCE AND TECHNOLOGY CORPORATION;HONDA, HIROSHI;TAKAMATSU, HIROSHI 发明人 HONDA, HIROSHI;TAKAMATSU, HIROSHI
分类号 H01L23/367;(IPC1-7):H01L23/34 主分类号 H01L23/367
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