发明名称 |
BIT LINE SETUP AND DISCHARGE CIRCUIT FOR PROGRAMMING NON-VOLATILE MEMORY |
摘要 |
PURPOSE: A bit line setup and discharge circuit for programming non-volatile memory is provided to decrease a noise in a power supply voltage and a ground by decreasing a peak current during a charge and discharge of bit line in a programming operation. CONSTITUTION: An array of memory cell(110) includes a plurality of bit lines and a plurality of word lines. The plurality of bit lines are connected with a column array of memory cell. The plurality of word lines are connected with a row array of memory cell. A bias circuit connected with the plurality of bit line includes a control circuit(210,220). The control circuit(210,220) controls a current flow of a switch in case a voltage of the switch and a voltage of a set of the plurality of bit line vary simultaneously.
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申请公布号 |
KR20020069092(A) |
申请公布日期 |
2002.08.29 |
申请号 |
KR20010056526 |
申请日期 |
2001.09.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, YEONG TAEK |
分类号 |
G11C16/06;G11C16/02;G11C16/04;G11C16/10;G11C16/24;G11C16/30;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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