METHOD FOR WRITING INTO MAGNETORESISTIVE MEMORY CELLS AND MAGNETORESISTIVE MEMORY WHICH CAN BE WRITTEN INTO ACCORDING TO SAID METHOD

摘要

The invention relates to a method for writing in the magnetoresistive memory cells of a MRAM memory, wherein the write currents (I>WL<, I>BL<) are applied respectively onto a word line (WL) and a bit line (BL), a superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines altering the direction of the magnetisation thereof. According to the inventive method, the write currents (I>WL<, I>BL<) are applied in a chronologically offset manner, to the corresponding word line (WL) and the bit line (BL) whereby the direction of magnetisation of the selected memory cell is rotated in several consecutive steps (a - h) in the desired direction for writing a logical "0" or "1".