METHOD AND RELATED APPARATUS OF PROCESSING A SUBSTRATE
摘要
A method of processing a substrate includes depositing a glass bonding layer on a first surface of one of either a substrate or a handle wafer, positioning the handle wafer in contact with the substrate via the bonding layer, and heating the substrate, bonding layer, and handle wafer at a temperature below about 425 DEG C to bond the handle wafer to the substrate. The bonding layer adjoining the substrate and handle wafer is formed of a non-silicate glass that is substantially unsusceptible to outgassing in ultrahigh vacuum environments and is impervious to substantial chemical and structural degradation during the thermal processing at temperatures at least up to about 500 DEG C.
申请公布号
WO02067299(A2)
申请公布日期
2002.08.29
申请号
WO2002US05246
申请日期
2002.02.13
申请人
THE CHARLES STARK DRAPER LABORATORY, INC.
发明人
WORTH, THOMAS, MICHAEL;ROBBINS, WILLIAM, L.;MARINIS, THOMAS, F.;MESCHER, MARK, J.