Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AIN) as the "insulator" in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AIN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AIN/Si and Pd/AIN/SiC wherein the SiC is preferably 6H-SiC.
申请公布号
WO0169228(A3)
申请公布日期
2002.08.29
申请号
WO2001US08313
申请日期
2001.03.16
申请人
WAYNE STATE UNIVERSITY;SERINA, FLAMINIA;AUNER, GREGORY, W.;NG, KA, YUEN, SIMON;NAIK, RATNA
发明人
SERINA, FLAMINIA;AUNER, GREGORY, W.;NG, KA, YUEN, SIMON;NAIK, RATNA