发明名称 |
Method of manufacturing low resistivity p-type compound semiconductor material |
摘要 |
The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
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申请公布号 |
US2002119587(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20020131136 |
申请日期 |
2002.04.25 |
申请人 |
UNITED EPITAXY COMPANY, LTD. |
发明人 |
TSAI TZONG-LIANG;CHANG CHUNG-YING |
分类号 |
H01L21/00;H01L21/20;H01L21/268;H01L21/324;H01L21/36;H01L33/12;H01L33/28;H01L33/32;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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