发明名称 HIGH PERFORMANCE DOUBLE-GATE LATCH
摘要 <p>A differential circuit to be used as a latch-up for asymmetric-double-gate complementary metal oxide semiconductor (DGCMOS) devices is provided. Specifically, the differential circuit comprises an asymmetric-DGCMOS device having the weak gates tied to input circuitry and strong gates that are used in cross-coupling.</p>
申请公布号 WO2002067425(A2) 申请公布日期 2002.08.29
申请号 GB2002000516 申请日期 2002.02.07
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