发明名称 High Power Pin Diode Switch
摘要 A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.
申请公布号 US2002118076(A1) 申请公布日期 2002.08.29
申请号 US20000482175 申请日期 2000.01.12
申请人 SHARPE THOMAS M;CHARLTON DONALD A.;BURNS RICHARD W. 发明人 SHARPE THOMAS M;CHARLTON DONALD A.;BURNS RICHARD W.
分类号 H01P1/15;(IPC1-7):H01P1/10 主分类号 H01P1/15
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