发明名称 |
Method of depositing low dielectric constant silicon carbide layers |
摘要 |
A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
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申请公布号 |
US2002119250(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20010793818 |
申请日期 |
2001.02.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CAMPANA FRANCIMAR;NEMANI SRINIVAS;CHAPIN MICHAEL;VENKATARAMAN SHANKAR |
分类号 |
C23C16/36;H01L21/027;H01L21/311;H01L21/314;H01L21/768;(IPC1-7):C23C16/00;C23C16/24;C23C16/26;C23C16/32 |
主分类号 |
C23C16/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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