发明名称 |
Positive-working chemical-amplification photoresist composition |
摘要 |
Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.
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申请公布号 |
US2002119393(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20020126673 |
申请日期 |
2002.04.22 |
申请人 |
YUKAWA HIROTO;OOMORI KATSUMI;UCHIDA RYUSUKE;SAWAYANAGI YUKIHIRO |
发明人 |
YUKAWA HIROTO;OOMORI KATSUMI;UCHIDA RYUSUKE;SAWAYANAGI YUKIHIRO |
分类号 |
G03F7/039;G03F7/004;G03F7/09;H01L21/027;(IPC1-7):G03F7/038 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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