| 摘要 |
The contact surfaces (3) of the semi-conductor chip (1) and the substrate are arranged opposite each other and connected together in an electrically conductive manner, the distance between the contact surfaces being less than 10 mu m. In preferred embodiments, said distance is normally only 2 mu m, and can be created according to a diffusion soldering technique (SOLID). Other metallic surfaces (2) are provided so that the semi-conductor chip and the substrate can be joined, |
